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Physics Diagram q-8-067-fig-1

Identify the above op-amp circuit. Estimate the net output voltage V_0.

CSE 2010Paper II10 markscse-2010-subject-08-006

What is Josephson tunnelling? Distinguish between a.c. and d.c. Josephson effects.

CSE 2010Paper II10 markscse-2010-subject-08-005

Explain the reduced zone scheme of plotting the energy bands in solids. On the basis of E vs k curve distinguish between conductors, semiconductors and insulators.

CSE 2010Paper II10 markscse-2010-subject-08-001

Distinguish between Einstein and Debye models of specific heats of solids. Obtain an expression for the specific heat of a solid on the basis of Debye model. Discuss the results for low and high temperature ranges.

CSE 2010Paper II20 markscse-2010-subject-08-003

What do you understand by early effect in bipolar junction transistors ? What are its consequences ? Discuss briefly the advantage of using the BJT in the common collector configuration.

CSE 2009Paper II20 markscse-2009-subject-08-008

List the characteristics of an ideal OP-AMP. Write the expression for the output voltage in terms of input voltages and resistance values.

Physics Diagram cse-q-8-203-fig-1
CSE 2009Paper II20 markscse-2009-subject-08-007

Verify that the circuit shown below is an exclusive OR.

Physics Diagram cse-q-3-248-fig-1
CSE 2009Paper II10 markscse-2009-subject-08-009

The resistance of silicon and germanium varies with temperature. But these are not used normally as thermistors. Why ? Name at least two widely used materials for making thermistors and give any five applications of thermistor.

CSE 2009Paper II20 markscse-2009-subject-08-006

Silicon is the most popular semiconductor material used for the fabrication of electronic devices and integrated circuits. Why ? Give at least five reasons.

CSE 2009Paper II10 markscse-2009-subject-08-005

A type-II superconducting material with superconducting transition temperature T_c is placed in a magnetic field. What is the material state (normal or superconducting or mixed) for (i) T < T_c ; \quad H > H_{c_2} (ii) T > T_c ; \quad H < H_{c_1} (iii) T < T_c ; \quad H_{c_1} < H < H_{c_2} (iv) T < T_c ; \quad H < H_{c_1} (v) T > T_c ; \quad H > H_{c_2} where H_{c_1} and H_{c_2} are the lower and upper critical fields for a type-II superconductor.

CSE 2009Paper II2\times5=10 markscse-2009-subject-08-004

Which of the waves out of (i) X-rays, (ii) de-Broglie waves due to electrons or neutrons will be suitable for crystal diffraction ? Justify your answer in terms of energies of these waves for 0 \cdot 1 \text{ nm}.

CSE 2009Paper II15 markscse-2009-subject-08-003

Show that the reciprocal lattice of a hexagonal lattice is a hexagonal lattice with a rotation of axes.

CSE 2009Paper II10 markscse-2009-subject-08-001

What is Meissner effect ? Explain the conclusions drawn from the Meissner effect.

CSE 2009Paper II20 markscse-2009-subject-08-002

A certain colpits oscillator uses a tank circuit with L = 20\text{ mH}; C_1 = 200\text{ pf} and C_2 = 300\text{ pf}. What is the frequency of oscillation ?

CSE 2008Paper II20 markscse-2008-subject-08-008

How can the NAND-gates be combined to perform the OR-operation ?

CSE 2008Paper II10 markscse-2008-subject-08-007

Show the volt-ampere characteristics of a solar cell under illumination. Explain the characteristics.

CSE 2008Paper II15 markscse-2008-subject-08-006

Draw the circuit diagram of a two-stage RC coupled common emitter transistor amplifier. Show how the magnitude and phase of voltage gain vary with frequency. Define bandwidth of this amplifier. An amplifier with open loop voltage gain, A_v = 1000 \pm 100 is available. It is necessary to have an amplifier whose voltage gain varies by no more than \pm 0.1\%. Find the reverse transmission factor \beta of the feedback network used and the gain with feedback.

CSE 2008Paper II25 markscse-2008-subject-08-005

Explain the switching action of a FET. Two JFETs are connected in parallel with \gamma_{d1} (drain resistance) = 20\text{ k}\Omega, \gamma_{d2} = 30\text{ k}\Omega and g_{m1} (transconductance) = 2\text{ m-mho} and g_{m2} = 4\text{ m-mho}. Find the efffective \gamma_d and g_m.

CSE 2008Paper II20 markscse-2008-subject-08-004

(i) Transistors are current operated devices, while vacuum tubes are voltage operated." — Explain. (ii) Why are junction transistors called bipolar devices ?

CSE 2008Paper II10 markscse-2008-subject-08-003

Distinguish between 'soft' and 'hard' super-conductors. Explain how penetration depth varies with magnetic field strength and temperature.

CSE 2008Paper II20 markscse-2008-subject-08-002

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