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What is Meissner Effect ? Explain the validity of Meissner Effect in Type I and Type II superconductors.

IFoS 2020Paper II15 marksifos-2020-subject-08-005

A transistor operating in the CE mode draws a constant base current \text{I}_{\text{B}} of 30\ \mu\text{A}. The collector current \text{I}_{\text{C}} is found to change from 3\cdot 5\text{ mA} to 3\cdot 7\text{ mA} when the collector-emitter voltage \text{V}_{\text{CE}} changes from 7\cdot 5\text{ V} to 12\cdot 5\text{ V}. Calculate the output resistance and \beta at \text{V}_{\text{CE}} = 12\cdot 5\text{ V}. What is the value of \alpha ?

IFoS 2020Paper II10 marksifos-2020-subject-08-003

What is Josephson Effect ? Give an account of applications of superconductivity.

IFoS 2020Paper II15 marksifos-2020-subject-08-002

Consider atoms as hard, uniform spheres and packed closely together so that they fold touch one another. Calculate the number of atoms per cubic unit cell and fraction of volume occupied for simple cubic, body-centred and face-centred cubic structures.

IFoS 2020Paper II8 marksifos-2020-subject-08-001

An n-channel silicon JFET has donor concentration of 2 \times 10^{21}/\text{m}^3 and a channel width of 4~\mu\text{m}. If the dielectric constant of silicon is 12, find the pinch-off voltage. If the FET operates with a gate-source voltage of -2~\text{V}, what is the saturation voltage V_{\text{Dsat}}?

IFoS 2019Paper II10 marksifos-2019-subject-08-003

Obtain the Boolean expression for the output Y in the given logic circuit :

Physics Diagram ifos-q-8-097-fig-1

Simplify the expression and show that the circuit is equivalent to an AND gate with inputs A and B.

IFoS 2019Paper II8 marksifos-2019-subject-08-007

Describe briefly the construction of an enhancement type MOSFET using a p-type silicon bar. Point out the structural difference between enhancement and depletion forms of the MOSFET.

IFoS 2019Paper II15 marksifos-2019-subject-08-006

A transistor having \alpha = 0\cdot 975 and a reverse saturation current I_{\text{CO}} = 10~\mu\text{A} is operated in CE configuration. What is \beta for this configuration? If the base current is 250~\mu\text{A}, calculate the emitter current and the collector current.

IFoS 2019Paper II10 marksifos-2019-subject-08-005

Explain the Meissner effect in superconductivity. Obtain an expression for London penetration depth of magnetic field for a superconductor.

IFoS 2019Paper II15 marksifos-2019-subject-08-002

Explain the use of an op-amp as a differentiator and an integrator using proper circuit diagram. Write the condition to work as good differentiator and integrator.

IFoS 2019Paper II15 marksifos-2019-subject-08-004

A superconducting material has a critical temperature of 3\cdot 7~\text{K} and a magnetic field of 0\cdot 0306~\text{tesla} at 0~\text{K}. Find the critical field at 2~\text{K}.

IFoS 2019Paper II8 marksifos-2019-subject-08-001

A pair of transistors operates in a class B push-pull circuit with a power supply of voltage V_{\text{cc}} = 12\text{ V}. If the turns ratio of the output transformer is 2 and the load resistance R_{\text{L}} is 6\ \Omega, calculate the maximum output power and maximum dc power supplied. Hence find efficiency of the circuit. Neglect transformer winding resistance.

IFoS 2018Paper II10 marksifos-2018-subject-08-006

Derive the expression for electron concentration in the conduction band of an intrinsic semiconductor.

IFoS 2018Paper II20 marksifos-2018-subject-08-001

Explain drift velocity, mobility and conductivity of an intrinsic semiconductor.

IFoS 2018Paper II5 marksifos-2018-subject-08-003

Calculate the total conductivity in an intrinsic semiconductor. How does this conductivity change with temperature ?

IFoS 2018Paper II15 marksifos-2018-subject-08-004

A small magnet is placed on the surface of a disc of normal material. Explain what happens when the disc is cooled down so that it becomes superconducting. Can this be explained from classical viewpoint if we simply treat the superconductor as a material which has zero resistivity ?

IFoS 2018Paper II8 marksifos-2018-subject-08-002

Draw the circuit of a phase shift oscillator using transistor. Obtain the expression for the frequency of oscillations and condition for sustained oscillations. Give necessary equivalent circuit while deriving the expression of frequency of oscillations and condition for sustained oscillations.

IFoS 2018Paper II20 marksifos-2018-subject-08-005

Find the output voltage of the three-input adder circuit shown below.

Physics Diagram ifos-q-8-096-fig-1
IFoS 2018Paper II8 marksifos-2018-subject-08-008

Estimate the current gain of an n-p-n transistor if only 0\cdot 3\% of the conduction electrons that enter the base from the emitter recombine in the base region.

IFoS 2018Paper II10 marksifos-2018-subject-08-007

What is Meissner effect ? Explain perfect diamagnetism in reference to this.

IFoS 2017Paper II10 marksifos-2017-subject-08-002

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