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Phosphorous is doped in a silicon wafer. The impurity concentration is 10^{13}\text{ per cm}^3. If all the donors are active calculate its resistivity at room temperature. The mobility of electrons is 1250\text{ cm}^2/\text{V-s}.

CSE 1999Paper II20 markscse-1999-subject-08-003

How is frequency modulation advantageous compared to amplitude modulation? Still, why are the video signals transmitted by television stations amplitude modulated?

CSE 1999Paper II20 markscse-1999-subject-08-002

Simplify the given Boolean expression and draw the corresponding logic circuit using NAND gates: Y = (\bar{A} + B + C) . (\bar{A} + \bar{B} + C)

CSE 1999Paper II20 markscse-1999-subject-08-005

Simplify the following logic function and draw the corresponding logic diagram:- Y = (A+B).(A + C).(B+C)

CSE 1998Paper II20 markscse-1998-subject-08-005

What is the photovoltaic mode of operation for a photo-diode? Describe the construction and working of a silicon solar cell.

CSE 1998Paper II20 markscse-1998-subject-08-004

Explain the working N-P-N transistor. Derive expression for the current and voltage gains.

CSE 1998Paper II20 markscse-1998-subject-08-003

If E_0 is the peak value of the input voltage V_{in} calculate the output voltage V_{out}.

Physics Diagram cse-q-8-170-fig-1
CSE 1998Paper II20 markscse-1998-subject-08-002

Distinguish qualitatively between dia-, para-, ferro-, antiferro- and ferrimagnetism. How is the weak and temperature independence paramagnetism of metals explain?

CSE 1998Paper II20 markscse-1998-subject-08-001

Assuming that for a paramagnetic material, the magnetic susceptibility is inversely proportional to temperature in Kelvin, obtain Curie-Weiss law for the paramagnetic phase of a ferro-magnetic material.

CSE 1997Paper II20 markscse-1997-subject-08-001

Explain the basic distinction between a perfect conductor and a superconductor.

CSE 1997Paper II20 markscse-1997-subject-08-004

Draw the circuit of an emitter-follower and find its voltage gain.

CSE 1997Paper II30 markscse-1997-subject-08-003

Four silicon diodes are connected as shown in Fig. 1. A sinusoidal voltage of amplitude 2\text{ V} is applied in the input. What is the waveshape of the output and its amplitude? If the amplitude of the input voltage is reduced to 1\text{ V}, what will be the waveshape of the output and its amplitude ? Threshold voltage of each diode is 0.6\text{ V}.

Physics Diagram cse-q-8-167-fig-1
CSE 1997Paper II20 markscse-1997-subject-08-002

Simplify the following logic function and draw the corresponding logic gates: Y = A.B + B.\overline{C} + \overline{A}.B + \overline{A}.C + \overline{B}.\overline{C} + \overline{A}.\overline{B}.\overline{C} + A.B.C

CSE 1997Paper II30 markscse-1997-subject-08-005

Derive the expression for the frequency spectrum of a carrier wave of frequency f_c which is amplitude modulated by a frequency f_m. A certain transmitted radiates 9\text{ kW} of power when the carrier wave is unmodulated and 10.12\text{ kW} power when the carrier wave is sinusoidally modulated. Calculate the modulation index.

CSE 1996Paper II20 markscse-1996-subject-08-001

A Si BJT is connected as shown Fig . Show that it is in active region and works as an amplifier Calculate its mid frequency gain, given that BJT has h_{ie} = 1\text{ k}\Omega, h_{oe} = h_{re} = 0, I_{co} = 20\text{ nA}.

Physics Diagram cse-q-8-166-fig-2
CSE 1996Paper II30 markscse-1996-subject-08-002

Define ex-OR. Give its truth table and draw the possible logic blocks.

CSE 1996Paper II30 markscse-1996-subject-08-003

How does build in potential appear across a p-n junction? Explain under what biasing conditions drift and diffusion currents, respectively, dominate.

CSE 1995Paper II20 markscse-1995-subject-08-001

Establish the two Barkhausen conditions for sustained sinusoidal oscillations. Sketch the circuit of Wien's bridge oscillator and explain its working.

CSE 1995Paper II30 markscse-1995-subject-08-003

Draw the block diagram of a superhetro dyne radio receiver and explain the function of local oscillator.

CSE 1995Paper II30 markscse-1995-subject-08-002

Derive an expression for magnetic susceptibility below Neel's temperature for a ferromagnetic substance.

CSE 1994Paper II20 markscse-1994-subject-08-001

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