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Silicon is the most popular semiconductor material used for the fabrication of electronic devices and integrated circuits. Why ? Give at least five reasons.

CSE 2009Paper II10 markscse-2009-subject-08-005

Explain the switching action of a FET. Two JFETs are connected in parallel with \gamma_{d1} (drain resistance) = 20\text{ k}\Omega, \gamma_{d2} = 30\text{ k}\Omega and g_{m1} (transconductance) = 2\text{ m-mho} and g_{m2} = 4\text{ m-mho}. Find the efffective \gamma_d and g_m.

CSE 2008Paper II20 markscse-2008-subject-08-004

Draw the circuit diagram of a two-stage RC coupled common emitter transistor amplifier. Show how the magnitude and phase of voltage gain vary with frequency. Define bandwidth of this amplifier. An amplifier with open loop voltage gain, A_v = 1000 \pm 100 is available. It is necessary to have an amplifier whose voltage gain varies by no more than \pm 0.1\%. Find the reverse transmission factor \beta of the feedback network used and the gain with feedback.

CSE 2008Paper II25 markscse-2008-subject-08-005

Show the volt-ampere characteristics of a solar cell under illumination. Explain the characteristics.

CSE 2008Paper II15 markscse-2008-subject-08-006

How can the NAND-gates be combined to perform the OR-operation ?

CSE 2008Paper II10 markscse-2008-subject-08-007

(i) Transistors are current operated devices, while vacuum tubes are voltage operated." — Explain. (ii) Why are junction transistors called bipolar devices ?

CSE 2008Paper II10 markscse-2008-subject-08-003

Distinguish between 'soft' and 'hard' super-conductors. Explain how penetration depth varies with magnetic field strength and temperature.

CSE 2008Paper II20 markscse-2008-subject-08-002

Show that FCC-crystals are more closely packed than BCC-crystals,

CSE 2008Paper II10 markscse-2008-subject-08-001

A certain colpits oscillator uses a tank circuit with L = 20\text{ mH}; C_1 = 200\text{ pf} and C_2 = 300\text{ pf}. What is the frequency of oscillation ?

CSE 2008Paper II20 markscse-2008-subject-08-008

Simplify the equation: Y = [A \bar{B} (C + BD) + \bar{A} B C] using Boolean algebra. Give the logic circuit for the equation before and after the simplification.

CSE 2007Paper II10 markscse-2007-subject-08-007

Show that a lattice cannot have a five-fold rotational symmetry. However, some solids appear to exhibit this rotational symmetry. Explain briefly how this can be done.

CSE 2007Paper II10 markscse-2007-subject-08-001

What is Josephson effect? Discuss briefly DC and AC effects. Give some practical applications of Josephson junctions.

CSE 2007Paper II30 markscse-2007-subject-08-002

Discuss briefly the concept of effective mass in semiconductors and explain the significance of negative effective mass.

CSE 2007Paper II10 markscse-2007-subject-08-003

Explain the difference between n-p-n and p-n-p transistors. Give their device structure and biasing circuits. Draw a circuit for a single-stage common-emitter amplifier.

CSE 2007Paper II10 markscse-2007-subject-08-004

Explain the working of a phase-shift oscillator. Draw the circuit diagram of a phase-shift oscillator using either a transistor or an op-amp. What are the conditions which must be satisfied to achieve stable oscillations ? Calculate the frequency of oscillations for R = 10\ \Omega and C = 0.01\ \mu\text{F}.

CSE 2007Paper II25 markscse-2007-subject-08-005

Draw the device structure of a p-n junction solar cell and explain how the light energy is converted into electrical energy. Define the 'short-circuit current', open-circuit voltage' and 'efficiency' of a solar cell.

CSE 2007Paper II20 markscse-2007-subject-08-006

Give the Boolean expression and the truth table for an XOR gate. Why are NAND gates called universal gates ? Realise OR and XOR gates employing only NAND gates.

CSE 2007Paper II15 markscse-2007-subject-08-008

The following common-emitter amplifier is required to have a signal voltage gain V_{\text{out}} / V_S of at least 100. The transistor has \beta = 63, early voltage V_A = 100\text{ V} and I_{SE} = 1.5 \times 10^{-14}\text{ A} :

Physics Diagram cse-q-8-191-fig-1

Assuming that the operating collector voltage is supposed to be + 6\text{ V}, perform related calculations to check whether the circuit satisfies the operating point and voltage gain criteria. The reactance of the capacitors can be neglected at all frequencies.

CSE 2006Paper II20 markscse-2006-subject-08-002

(i) Simplify the logical expression f = ABC + B \overline{C} D + \overline{A} BC by using Karnaugh map and realise f using NAND gates only. 10 (ii) The transistor in the following circuit has \beta = 100 and V_A = 90\text{ V}. What value of R_B will give 0 volt d.c. output 10

Physics Diagram cse-q-8-221-fig-1
CSE 2006Paper II20 markscse-2006-subject-08-003

Explain the working and applications of a FET.

CSE 2006Paper II20 markscse-2006-subject-08-004

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