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Explain a solar cell employing its characteristics on output quantity Venus quantities like load current, radiance and temperature.

CSE 2001Paper II(10) markscse-2001-subject-08-004

(i) FETs have unique properties which make BJTs not suitable for some important applications. What are these most important FET applications? (ii) Briefly describe FETs as variable resistors.

CSE 2001Paper II(6+14) markscse-2001-subject-08-003

(i) Give a qualitative account of BCS theory of superconductivity. (ii) Obtain an expression for conductivity of an intrinsic semiconductor. How does it vary with temperature? (iii) The resistivity of an intrinsic semiconductor is 4.5\text{ ohm-m} at 20^\circ\text{C} and 2.0\text{ ohm-m} at 32^\circ\text{C}. Calculate the energy band gap.

CSE 2001Paper II(10+10+10) markscse-2001-subject-08-002

Which one of these mechanisms shows a negative dynamic resistance? Why?

CSE 2000Paper II10 markscse-2000-subject-08-003

A circuit of a NOT gate is given in the figure below. Explain how you will determine the values of the resistances R_B, R and R_L.

Physics Diagram cse-q-3-205-fig-1
CSE 2000Paper II20 markscse-2000-subject-08-007

Discuss the different breakdown mechanisms for a reverse biased Zener diode.

CSE 2000Paper II20 markscse-2000-subject-08-006

Explain why superconductors are perfect diamagnets.

CSE 2000Paper II20 markscse-2000-subject-08-002

What are the salient characteristics of ferromagnetic ? Explain how the Curie law of paramagnetism is modified to the Curie - Weiss law.

CSE 2000Paper II20 markscse-2000-subject-08-001

A Zener diode of 1\text{ W} power has a dynamic resistance of 10\text{ m}\Omega at the breakdown voltage of 3\text{ V}. What will be the fluctuations in the current through the diode if the voltage fluctuates by 100\text{ mV}? What will happen to the diode ? Why?

CSE 2000Paper II20 markscse-2000-subject-08-005

Do these mechanisms have different temperature coefficients? Explain.

CSE 2000Paper II10 markscse-2000-subject-08-004

A junction diode in series with a parallel combination of a large resistor and a capacitor acts as a linear detector of amplitude modulated waves. Explain the action.

CSE 1999Paper II20 markscse-1999-subject-08-004

Phosphorous is doped in a silicon wafer. The impurity concentration is 10^{13}\text{ per cm}^3. If all the donors are active calculate its resistivity at room temperature. The mobility of electrons is 1250\text{ cm}^2/\text{V-s}.

CSE 1999Paper II20 markscse-1999-subject-08-003

How is frequency modulation advantageous compared to amplitude modulation? Still, why are the video signals transmitted by television stations amplitude modulated?

CSE 1999Paper II20 markscse-1999-subject-08-002

What is Meissner effect? Superconducting tin has a critical temperature of 3.7 K in zero magnetic field and critical field at 0 K is 306 gauss. Determine the critical field at 2K.

CSE 1999Paper II20 markscse-1999-subject-08-001

Simplify the given Boolean expression and draw the corresponding logic circuit using NAND gates: Y = (\bar{A} + B + C) . (\bar{A} + \bar{B} + C)

CSE 1999Paper II20 markscse-1999-subject-08-005

What is the photovoltaic mode of operation for a photo-diode? Describe the construction and working of a silicon solar cell.

CSE 1998Paper II20 markscse-1998-subject-08-004

Explain the working N-P-N transistor. Derive expression for the current and voltage gains.

CSE 1998Paper II20 markscse-1998-subject-08-003

If E_0 is the peak value of the input voltage V_{in} calculate the output voltage V_{out}.

Physics Diagram cse-q-8-170-fig-1
CSE 1998Paper II20 markscse-1998-subject-08-002

Distinguish qualitatively between dia-, para-, ferro-, antiferro- and ferrimagnetism. How is the weak and temperature independence paramagnetism of metals explain?

CSE 1998Paper II20 markscse-1998-subject-08-001

Simplify the following logic function and draw the corresponding logic diagram:- Y = (A+B).(A + C).(B+C)

CSE 1998Paper II20 markscse-1998-subject-08-005

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