Carrier concentration (Question 1 (6 Marks)) — UPSC Physics Optional IFoS 2024 Paper II

Given that for intrinsic Si at T = 300\text{ K}, the band gap is 1\cdot 1\text{ eV} and the intrinsic carrier concentration is n_i = 1\cdot 5 \times 10^{10}\text{ cm}^{-3}. (i) Calculate the intrinsic carrier concentration at T = 450\text{ K}. Assume that the band gap at T = 450\text{ K} is 1\cdot 08\text{ eV}.